Infineon CoolMOS™ C3 N-Channel MOSFET, 4 A, 800 V, 3-Pin TO-220 SPP04N80C3XKSA1
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
800 V
Package Type
TO-220
Series
CoolMOS™ C3
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
63 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
10.36mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
23 nC @ 10 V
Width
4.57mm
Transistor Material
Si
Height
15.95mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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KM 10,25
KM 5,124 Each (In a Pack of 2) (bez PDV-a)
KM 11,99
KM 5,995 Each (In a Pack of 2) (s PDV-om)
Standard
2
KM 10,25
KM 5,124 Each (In a Pack of 2) (bez PDV-a)
KM 11,99
KM 5,995 Each (In a Pack of 2) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
2
Informacije o stanju skladišta trenutno nisu dostupne.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
800 V
Package Type
TO-220
Series
CoolMOS™ C3
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
63 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
10.36mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
23 nC @ 10 V
Width
4.57mm
Transistor Material
Si
Height
15.95mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda