N-Channel MOSFET Transistor & Diode, 150 A, 150 V, 4-Pin SOT-227B IXYS IXFN150N15

Name: N-Channel MOSFET Transistor & Diode, 150 A, 150 V, 4-Pin SOT-227B IXYS IXFN150N15
Brand: IXYS
SKU: 0194243P

RS kataloški broj:: 194-243Pbrend: IXYSProizvođački broj:: IXFN150N15

Prikaži sve u MOSFETs

Tehnička dokumentacija

Tehnički podaci

Brand

IXYS

Channel Type

Maximum Continuous Drain Current

150 A

Maximum Drain Source Voltage

150 V

Package Type

SOT-227B

Mounting Type

Screw Mount

Pin Count

Maximum Drain Source Resistance

13 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

Maximum Power Dissipation

600 W

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

360 nC @ 10 V

Number of Elements per Chip

Maximum Operating Temperature

+150 °C

Length

38.2mm

Width

25.07mm

Series

HiperFET

Minimum Operating Temperature

-55 °C

Height

9.6mm

You may be interested in

IXYS HiperFET, Polar N-Channel MOSFET, 150 A, 150 V, 4-Pin SOT-227 IXFN180N15Pbrend: IXYS

RSD 6.937Each (bez PDV-a)

Informacije o stanju skladišta trenutno nisu dostupne.

Cena na upit

N-Channel MOSFET Transistor & Diode, 150 A, 150 V, 4-Pin SOT-227B IXYS IXFN150N15

Odaberite vrstu pakovanja

Proizvodno pakovanje (cev)

Cena na upit

N-Channel MOSFET Transistor & Diode, 150 A, 150 V, 4-Pin SOT-227B IXYS IXFN150N15

Informacije o stanju skladišta trenutno nisu dostupne.

Odaberite vrstu pakovanja

Proizvodno pakovanje (cev)

Informacije o stanju skladišta trenutno nisu dostupne.

Proverite ponovno kasnije.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
Pregledajte i doprinesite sadržaju internet stranice i foruma
Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda

Kliknite ovdje kako biste saznali više

You may be interested in

IXYS HiperFET, Polar N-Channel MOSFET, 150 A, 150 V, 4-Pin SOT-227 IXFN180N15Pbrend: IXYS

RSD 6.937Each (bez PDV-a)

Tehnička dokumentacija

Tehnički podaci

Brand

IXYS

Channel Type

Maximum Continuous Drain Current

150 A

Maximum Drain Source Voltage

150 V

Package Type

SOT-227B

Mounting Type

Screw Mount

Pin Count

Maximum Drain Source Resistance

13 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

Maximum Power Dissipation

600 W

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

360 nC @ 10 V

Number of Elements per Chip

Maximum Operating Temperature

+150 °C

Length

38.2mm

Width

25.07mm

Series

HiperFET

Minimum Operating Temperature

-55 °C

Height

9.6mm