IXYS IXGH30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole

RS kataloški broj:: 168-4412robna marka: IXYSProizvođački broj:: IXGH30N120B3D1
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Prikaži sve u IGBTs

Tehnička dokumentacija

Tehnički podaci

Brand

IXYS

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

1200 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

IGBT Discretes, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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€ 444,90

€ 14,83 Each (In a Tube of 30) (bez PDV-a)

€ 520,53

€ 17,351 Each (In a Tube of 30) (s PDV-om)

IXYS IXGH30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole

30

Dostupno u više komada 30
30€ 444,90
60€ 889,80
90€ 1.334,70
120€ 1.779,60
150€ 2.224,50
180€ 2.669,40
210€ 3.114,30
240€ 3.559,20
270€ 4.004,10
300€ 4.449,00
330€ 4.893,90
360€ 5.338,80
390€ 5.783,70
420€ 6.228,60
450€ 6.673,50

€ 444,90

€ 14,83 Each (In a Tube of 30) (bez PDV-a)

€ 520,53

€ 17,351 Each (In a Tube of 30) (s PDV-om)

IXYS IXGH30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole
Informacije o stanju skladišta trenutno nisu dostupne.

30

Dostupno u više komada 30
30€ 444,90
60€ 889,80
90€ 1.334,70
120€ 1.779,60
150€ 2.224,50
180€ 2.669,40
210€ 3.114,30
240€ 3.559,20
270€ 4.004,10
300€ 4.449,00
330€ 4.893,90
360€ 5.338,80
390€ 5.783,70
420€ 6.228,60
450€ 6.673,50

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

IXYS

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

1200 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

IGBT Discretes, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više