Tehnička dokumentacija
Tehnički podaci
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
30 mA
Maximum Drain Source Voltage
500 V
Package Type
TO-243AA
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
1 kΩ
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.6mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
4.6mm
Height
1.6mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
MOSFET Transistors, Microchip
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€ 1,12
komadno (isporučuje se u namotaju) (bez PDV-a)
€ 1,31
komadno (isporučuje se u namotaju) (s PDV-om)
20
€ 1,12
komadno (isporučuje se u namotaju) (bez PDV-a)
€ 1,31
komadno (isporučuje se u namotaju) (s PDV-om)
20
Kupujte na veliko
količina | Jedinična cijena | Po kolut |
---|---|---|
20 - 20 | € 1,12 | € 22,40 |
40 - 80 | € 1,08 | € 21,60 |
100+ | € 1,04 | € 20,80 |
Tehnička dokumentacija
Tehnički podaci
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
30 mA
Maximum Drain Source Voltage
500 V
Package Type
TO-243AA
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
1 kΩ
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.6mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
4.6mm
Height
1.6mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.