N-Channel MOSFET, 22 A, 600 V, 3-Pin TO-3PN onsemi FCA22N60N

RS kataloški broj:: 759-9431Probna marka: onsemiProizvođački broj:: FCA22N60N
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Tehnička dokumentacija

Tehnički podaci

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

600 V

Package Type

TO-3PN

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

165 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

205 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

45 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

15.8mm

Width

5mm

Transistor Material

Si

Series

SupreMOS

Minimum Operating Temperature

-55 °C

Height

20.1mm

Zemlja podrijetla

China

Detalji o proizvodu

SupreMOS® MOSFET, Fairchild Semiconductor

Fairchild brings a new generation of 600V Super-Junction MOSFETs - SupreMOS®.
The combination of their low RDS(on) and total gate charge brings a 40 percent lower Figure of Merit (FOM) compared to Fairchild's 600V SuperFET™ MOSFETs. In addition, the SupreMOS family offers a low gate charge for the same RDS(on), providing excellent switching performance and delivering 20 percent less switching and conduction losses, resulting in higher efficiency.
These features enable power supplies to meet ENERGY STAR® 80 PLUS Gold classification for desktop PCs and Platinum classification for servers.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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P.O.A.

N-Channel MOSFET, 22 A, 600 V, 3-Pin TO-3PN onsemi FCA22N60N
Odaberite vrstu pakovanja

P.O.A.

N-Channel MOSFET, 22 A, 600 V, 3-Pin TO-3PN onsemi FCA22N60N
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

600 V

Package Type

TO-3PN

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

165 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

205 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

45 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

15.8mm

Width

5mm

Transistor Material

Si

Series

SupreMOS

Minimum Operating Temperature

-55 °C

Height

20.1mm

Zemlja podrijetla

China

Detalji o proizvodu

SupreMOS® MOSFET, Fairchild Semiconductor

Fairchild brings a new generation of 600V Super-Junction MOSFETs - SupreMOS®.
The combination of their low RDS(on) and total gate charge brings a 40 percent lower Figure of Merit (FOM) compared to Fairchild's 600V SuperFET™ MOSFETs. In addition, the SupreMOS family offers a low gate charge for the same RDS(on), providing excellent switching performance and delivering 20 percent less switching and conduction losses, resulting in higher efficiency.
These features enable power supplies to meet ENERGY STAR® 80 PLUS Gold classification for desktop PCs and Platinum classification for servers.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više