P-Channel MOSFET, 2 A, 20 V, 3-Pin SOT-23 onsemi FDN342P

RS kataloški broj:: 671-0444Probna marka: onsemiProizvođački broj:: FDN342P
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Tehnička dokumentacija

Tehnički podaci

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Typical Gate Charge @ Vgs

6.3 nC @ 4.5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.92mm

Width

1.4mm

Transistor Material

Si

Series

PowerTrench

Height

0.94mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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€ 0,62

komadno (isporučuje se u namotaju) (bez PDV-a)

€ 0,725

komadno (isporučuje se u namotaju) (s PDV-om)

P-Channel MOSFET, 2 A, 20 V, 3-Pin SOT-23 onsemi FDN342P
Odaberite vrstu pakovanja

€ 0,62

komadno (isporučuje se u namotaju) (bez PDV-a)

€ 0,725

komadno (isporučuje se u namotaju) (s PDV-om)

P-Channel MOSFET, 2 A, 20 V, 3-Pin SOT-23 onsemi FDN342P
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Kupujte na veliko

količinaJedinična cijenaPo kolut
10 - 90€ 0,62€ 6,20
100 - 490€ 0,46€ 4,60
500 - 990€ 0,38€ 3,80
1000 - 2990€ 0,33€ 3,30
3000+€ 0,28€ 2,80

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PRIDRUŽITE SE BESPLATNO

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design-spark
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  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
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Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Typical Gate Charge @ Vgs

6.3 nC @ 4.5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.92mm

Width

1.4mm

Transistor Material

Si

Series

PowerTrench

Height

0.94mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više