onsemi QFET N-Channel MOSFET, 5.5 A, 800 V, 3-Pin TO-220F FQPF6N80C

RS kataloški broj:: 671-5290robna marka: onsemiProizvođački broj:: FQPF6N80C
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Tehnička dokumentacija

Tehnički podaci

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

5.5 A

Maximum Drain Source Voltage

800 V

Package Type

TO-220F

Series

QFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

51 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Number of Elements per Chip

1

Length

10.16mm

Typical Gate Charge @ Vgs

21 nC @ 10 V

Width

4.7mm

Height

9.19mm

Minimum Operating Temperature

-55 °C

Zemlja podrijetla

Malaysia

Detalji o proizvodu

QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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Cijena na upit

Each (In a Pack of 5) (bez PDV-a)

onsemi QFET N-Channel MOSFET, 5.5 A, 800 V, 3-Pin TO-220F FQPF6N80C
Odaberite vrstu pakovanja

Cijena na upit

Each (In a Pack of 5) (bez PDV-a)

onsemi QFET N-Channel MOSFET, 5.5 A, 800 V, 3-Pin TO-220F FQPF6N80C
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Informacije o stanju skladišta trenutno nisu dostupne.

Provjerite ponovno kasnije.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
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Tehnička dokumentacija

Tehnički podaci

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

5.5 A

Maximum Drain Source Voltage

800 V

Package Type

TO-220F

Series

QFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

51 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Number of Elements per Chip

1

Length

10.16mm

Typical Gate Charge @ Vgs

21 nC @ 10 V

Width

4.7mm

Height

9.19mm

Minimum Operating Temperature

-55 °C

Zemlja podrijetla

Malaysia

Detalji o proizvodu

QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više
You may be interested in