onsemi ISL9V3040D3ST IGBT, 21 A 300 V, 3-Pin DPAK (TO-252), Surface Mount
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiMaximum Continuous Collector Current
21 A
Maximum Collector Emitter Voltage
300 V
Maximum Gate Emitter Voltage
±10V
Maximum Power Dissipation
150 W
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
6.73 x 6.22 x 2.39mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-40 °C
Detalji o proizvodu
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Provjerite ponovno kasnije.
€ 3,05
komadno (isporučuje se u namotaju) (bez PDV-a)
€ 3,568
komadno (isporučuje se u namotaju) (s PDV-om)
5
€ 3,05
komadno (isporučuje se u namotaju) (bez PDV-a)
€ 3,568
komadno (isporučuje se u namotaju) (s PDV-om)
5
Kupujte na veliko
| količina | Jedinična cijena | Po kolut |
|---|---|---|
| 5 - 5 | € 3,05 | € 15,25 |
| 10 - 95 | € 2,60 | € 13,00 |
| 100+ | € 2,05 | € 10,25 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiMaximum Continuous Collector Current
21 A
Maximum Collector Emitter Voltage
300 V
Maximum Gate Emitter Voltage
±10V
Maximum Power Dissipation
150 W
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
6.73 x 6.22 x 2.39mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-40 °C
Detalji o proizvodu
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda