Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
20mA
Maximum Drain Source Voltage
15 V
Maximum Gate Source Voltage
-35 V
Maximum Drain Gate Voltage
35V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
30 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Drain Gate On-Capacitance
28pF
Source Gate On-Capacitance
28pF
Dimensions
2.9 x 1.3 x 1.04mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
1.04mm
Width
1.3mm
Detalji o proizvodu
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
€ 0,37
komadno (isporučuje se u namotaju) (bez PDV-a)
€ 0,433
komadno (isporučuje se u namotaju) (s PDV-om)
Proizvodno pakovanje (kolut)
500
€ 0,37
komadno (isporučuje se u namotaju) (bez PDV-a)
€ 0,433
komadno (isporučuje se u namotaju) (s PDV-om)
Proizvodno pakovanje (kolut)
500
Kupujte na veliko
količina | Jedinična cijena | Po kolut |
---|---|---|
500 - 950 | € 0,37 | € 18,50 |
1000+ | € 0,34 | € 17,00 |
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
20mA
Maximum Drain Source Voltage
15 V
Maximum Gate Source Voltage
-35 V
Maximum Drain Gate Voltage
35V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
30 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Drain Gate On-Capacitance
28pF
Source Gate On-Capacitance
28pF
Dimensions
2.9 x 1.3 x 1.04mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
1.04mm
Width
1.3mm
Detalji o proizvodu
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.