Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
P
Idss Drain-Source Cut-off Current
1.5 to 20mA
Maximum Drain Gate Voltage
25V dc
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
300 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Source Gate On-Capacitance
11pF
Dimensions
3.04 x 1.4 x 1.01mm
Width
1.4mm
Height
1.01mm
Minimum Operating Temperature
-55 °C
Length
3.04mm
Maximum Operating Temperature
+150 °C
Detalji o proizvodu
P-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
KM 5,67
KM 0,567 Each (In a Pack of 10) (bez PDV-a)
KM 6,63
KM 0,663 Each (In a Pack of 10) (s PDV-om)
10
KM 5,67
KM 0,567 Each (In a Pack of 10) (bez PDV-a)
KM 6,63
KM 0,663 Each (In a Pack of 10) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
10
Informacije o stanju skladišta trenutno nisu dostupne.
količina | Jedinična cijena | Po pakovanje |
---|---|---|
10 - 90 | KM 0,567 | KM 5,67 |
100+ | KM 0,274 | KM 2,74 |
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
P
Idss Drain-Source Cut-off Current
1.5 to 20mA
Maximum Drain Gate Voltage
25V dc
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
300 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Source Gate On-Capacitance
11pF
Dimensions
3.04 x 1.4 x 1.01mm
Width
1.4mm
Height
1.01mm
Minimum Operating Temperature
-55 °C
Length
3.04mm
Maximum Operating Temperature
+150 °C
Detalji o proizvodu
P-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.