Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
446 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Maximum Operating Temperature
+150 °C
Length
15.87mm
Typical Gate Charge @ Vgs
158 nC @ 10 V
Width
4.82mm
Number of Elements per Chip
1
Forward Diode Voltage
1.3V
Height
20.82mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
€ 20,00
Each (In a Tube of 30) (bez PDV-a)
€ 23,40
Each (In a Tube of 30) (s PDV-om)
30
€ 20,00
Each (In a Tube of 30) (bez PDV-a)
€ 23,40
Each (In a Tube of 30) (s PDV-om)
30
Kupujte na veliko
količina | Jedinična cijena | Po cijev |
---|---|---|
30 - 90 | € 20,00 | € 600,00 |
120+ | € 19,75 | € 592,50 |
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
446 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Maximum Operating Temperature
+150 °C
Length
15.87mm
Typical Gate Charge @ Vgs
158 nC @ 10 V
Width
4.82mm
Number of Elements per Chip
1
Forward Diode Voltage
1.3V
Height
20.82mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China