Dual N/P-Channel-Channel MOSFET, 1.3 A, 8 V, 6-Pin SOT-363 onsemi NTJD1155LT1G

RS kataloški broj:: 780-0605robna marka: onsemiProizvođački broj:: NTJD1155LT1GIMPA: 0
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Tehnička dokumentacija

Tehnički podaci

Channel Mode

Enhancement

Number of Elements per Chip

2

Channel Type

N, P

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Pin Count

6

Transistor Configuration

N+P Loadswitch

Maximum Gate Threshold Voltage

1V

Maximum Drain Source Voltage

8 V

Mounting Type

Surface Mount

Maximum Operating Temperature

+150 °C

Maximum Gate Source Voltage

+8 V

Width

1.35mm

Height

1mm

Length

2.2mm

Maximum Continuous Drain Current

1.3 A

Package Type

SOT-363

Maximum Power Dissipation

400 mW

Maximum Drain Source Resistance

320 mΩ

Detalji o proizvodu

S6SAE101A00SA1002 Solar-Powered IoT Device Kit, Cypress

The Solar-Powered Internet-of-Things (IoT) Device Kit provides Bluetooth Low Energy (BLE) wireless connectivity for the development of a solar-powered IoT application. The Energy Harvesting Motherboard with the solar panel connected powers the Bluetooth Low Energy (BLE) communication. Data are transmitted with ambient light as low as 200 lx. Also supports the use of a coin cell battery.
A BLE-to-USB Bridge board, that is pre-programmed plugs into the USB port of a computer. Software provided by Cypress, are ready for use example applications.
The I²C-bus temperature and humidity sensors on-board offer environmental real-time data.

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€ 0,25

Each (Supplied as a Tape) (bez PDV-a)

€ 0,292

Each (Supplied as a Tape) (s PDV-om)

Dual N/P-Channel-Channel MOSFET, 1.3 A, 8 V, 6-Pin SOT-363 onsemi NTJD1155LT1G
Odaberite vrstu pakovanja

€ 0,25

Each (Supplied as a Tape) (bez PDV-a)

€ 0,292

Each (Supplied as a Tape) (s PDV-om)

Dual N/P-Channel-Channel MOSFET, 1.3 A, 8 V, 6-Pin SOT-363 onsemi NTJD1155LT1G
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Channel Mode

Enhancement

Number of Elements per Chip

2

Channel Type

N, P

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Pin Count

6

Transistor Configuration

N+P Loadswitch

Maximum Gate Threshold Voltage

1V

Maximum Drain Source Voltage

8 V

Mounting Type

Surface Mount

Maximum Operating Temperature

+150 °C

Maximum Gate Source Voltage

+8 V

Width

1.35mm

Height

1mm

Length

2.2mm

Maximum Continuous Drain Current

1.3 A

Package Type

SOT-363

Maximum Power Dissipation

400 mW

Maximum Drain Source Resistance

320 mΩ

Detalji o proizvodu

S6SAE101A00SA1002 Solar-Powered IoT Device Kit, Cypress

The Solar-Powered Internet-of-Things (IoT) Device Kit provides Bluetooth Low Energy (BLE) wireless connectivity for the development of a solar-powered IoT application. The Energy Harvesting Motherboard with the solar panel connected powers the Bluetooth Low Energy (BLE) communication. Data are transmitted with ambient light as low as 200 lx. Also supports the use of a coin cell battery.
A BLE-to-USB Bridge board, that is pre-programmed plugs into the USB port of a computer. Software provided by Cypress, are ready for use example applications.
The I²C-bus temperature and humidity sensors on-board offer environmental real-time data.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više