Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
27 A
Maximum Drain Source Voltage
60 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
31.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
28 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
4.25mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5mm
Typical Gate Charge @ Vgs
5 nC @ 10 V
Height
1.15mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
€ 3,25
komadno (u namotaju od 3000) (bez PDV-a)
€ 3,802
komadno (u namotaju od 3000) (s PDV-om)
3000
€ 3,25
komadno (u namotaju od 3000) (bez PDV-a)
€ 3,802
komadno (u namotaju od 3000) (s PDV-om)
3000
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
27 A
Maximum Drain Source Voltage
60 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
31.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
28 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
4.25mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5mm
Typical Gate Charge @ Vgs
5 nC @ 10 V
Height
1.15mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V