Tehnička dokumentacija
Tehnički podaci
Spectrums Detected
Infrared, Ultraviolet, Visible Light
Spectrum(s) Detected
Infrared, Ultraviolet, Visible Light
Number of Channels
1
Maximum Light Current
12.5µA
Maximum Dark Current
3nA
Angle of Half Sensitivity
120 °
Polarity
NPN
Number of Pins
2
Mounting Type
Surface Mount
Package Type
SMD
Dimensions
2.1 x 1.35 x 0.9mm
Collector Current
20mA
Spectral Range of Sensitivity
350 → 950 nm
Minimum Wavelength Detected
350nm
Maximum Wavelength Detected
950nm
Width
1.35mm
Height
0.9mm
Length
2.1mm
Zemlja podrijetla
Taiwan, Province Of China
Detalji o proizvodu
Ambient Light Sensors - Vlambda
A range of NPN silicon phototransistors from OSRAM Opto Semiconductors, with improved V lambda characteristics. These compact phototransistors are suitable for a wide range of applications including; ambient light detectors, exposure meters for both daylight and artificial light, sensor for backlight dimming and for control and drive circuits.
Ambient Light Sensors, OSRAM Opto Semiconductors
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
€ 1.200,00
€ 0,40 komadno (u namotaju od 3000) (bez PDV-a)
€ 1.404,00
€ 0,468 komadno (u namotaju od 3000) (s PDV-om)
3000
€ 1.200,00
€ 0,40 komadno (u namotaju od 3000) (bez PDV-a)
€ 1.404,00
€ 0,468 komadno (u namotaju od 3000) (s PDV-om)
3000
Tehnička dokumentacija
Tehnički podaci
Spectrums Detected
Infrared, Ultraviolet, Visible Light
Spectrum(s) Detected
Infrared, Ultraviolet, Visible Light
Number of Channels
1
Maximum Light Current
12.5µA
Maximum Dark Current
3nA
Angle of Half Sensitivity
120 °
Polarity
NPN
Number of Pins
2
Mounting Type
Surface Mount
Package Type
SMD
Dimensions
2.1 x 1.35 x 0.9mm
Collector Current
20mA
Spectral Range of Sensitivity
350 → 950 nm
Minimum Wavelength Detected
350nm
Maximum Wavelength Detected
950nm
Width
1.35mm
Height
0.9mm
Length
2.1mm
Zemlja podrijetla
Taiwan, Province Of China
Detalji o proizvodu
Ambient Light Sensors - Vlambda
A range of NPN silicon phototransistors from OSRAM Opto Semiconductors, with improved V lambda characteristics. These compact phototransistors are suitable for a wide range of applications including; ambient light detectors, exposure meters for both daylight and artificial light, sensor for backlight dimming and for control and drive circuits.