Tehnička dokumentacija
Tehnički podaci
Spectrums Detected
Infrared, Ultraviolet, Visible Light
Spectrum(s) Detected
Infrared, Ultraviolet, Visible Light
Number of Channels
1
Maximum Light Current
12.5µA
Maximum Dark Current
3nA
Angle of Half Sensitivity
120 °
Polarity
NPN
Number of Pins
2
Mounting Type
Surface Mount
Package Type
SMD
Dimensions
2.1 x 1.35 x 0.9mm
Collector Current
20mA
Spectral Range of Sensitivity
350 → 950 nm
Minimum Wavelength Detected
350nm
Maximum Wavelength Detected
950nm
Length
2.1mm
Width
1.35mm
Height
0.9mm
Zemlja podrijetla
Taiwan, Province Of China
Detalji o proizvodu
Ambient Light Sensors - Vlambda
A range of NPN silicon phototransistors from OSRAM Opto Semiconductors, with improved V lambda characteristics. These compact phototransistors are suitable for a wide range of applications including; ambient light detectors, exposure meters for both daylight and artificial light, sensor for backlight dimming and for control and drive circuits.
Ambient Light Sensors, OSRAM Opto Semiconductors
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
€ 0,75
komadno (isporučuje se u namotaju) (bez PDV-a)
€ 0,878
komadno (isporučuje se u namotaju) (s PDV-om)
20
€ 0,75
komadno (isporučuje se u namotaju) (bez PDV-a)
€ 0,878
komadno (isporučuje se u namotaju) (s PDV-om)
20
Kupujte na veliko
količina | Jedinična cijena | Po kolut |
---|---|---|
20 - 380 | € 0,75 | € 15,00 |
400 - 780 | € 0,46 | € 9,20 |
800 - 1480 | € 0,39 | € 7,80 |
1500+ | € 0,36 | € 7,20 |
Tehnička dokumentacija
Tehnički podaci
Spectrums Detected
Infrared, Ultraviolet, Visible Light
Spectrum(s) Detected
Infrared, Ultraviolet, Visible Light
Number of Channels
1
Maximum Light Current
12.5µA
Maximum Dark Current
3nA
Angle of Half Sensitivity
120 °
Polarity
NPN
Number of Pins
2
Mounting Type
Surface Mount
Package Type
SMD
Dimensions
2.1 x 1.35 x 0.9mm
Collector Current
20mA
Spectral Range of Sensitivity
350 → 950 nm
Minimum Wavelength Detected
350nm
Maximum Wavelength Detected
950nm
Length
2.1mm
Width
1.35mm
Height
0.9mm
Zemlja podrijetla
Taiwan, Province Of China
Detalji o proizvodu
Ambient Light Sensors - Vlambda
A range of NPN silicon phototransistors from OSRAM Opto Semiconductors, with improved V lambda characteristics. These compact phototransistors are suitable for a wide range of applications including; ambient light detectors, exposure meters for both daylight and artificial light, sensor for backlight dimming and for control and drive circuits.