Renesas Electronics RJP4010AGE-01#P5 IGBT, 150 (Pulse) A 400 V, 8-Pin TSOJ, Surface Mount

RS kataloški broj:: 121-6899robna marka: Renesas ElectronicsProizvođački broj:: RJP4010AGE-01#P5
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Tehnička dokumentacija

Tehnički podaci

Brand

Renesas Electronics

Maximum Continuous Collector Current

150 (Pulse) A

Maximum Collector Emitter Voltage

400 V

Maximum Gate Emitter Voltage

±6V

Maximum Power Dissipation

1.6 W

Package Type

TSOJ

Mounting Type

Surface Mount

Channel Type

N

Pin Count

8

Transistor Configuration

Single

Dimensions

3.1 x 2.5 x 1mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

5100pF

Maximum Operating Temperature

+150 °C

Detalji o proizvodu

IGBT Discretes, Renesas Electronics

IGBT Discretes & Modules

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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P.O.A.

Renesas Electronics RJP4010AGE-01#P5 IGBT, 150 (Pulse) A 400 V, 8-Pin TSOJ, Surface Mount

4

Dostupno u više komada 4
4P.O.A.
8P.O.A.
12P.O.A.
16P.O.A.
20P.O.A.
24P.O.A.
28P.O.A.
32P.O.A.
36P.O.A.
40P.O.A.
44P.O.A.
48P.O.A.
52P.O.A.
56P.O.A.
60P.O.A.

P.O.A.

Renesas Electronics RJP4010AGE-01#P5 IGBT, 150 (Pulse) A 400 V, 8-Pin TSOJ, Surface Mount
Informacije o stanju skladišta trenutno nisu dostupne.

4

Dostupno u više komada 4
4P.O.A.
8P.O.A.
12P.O.A.
16P.O.A.
20P.O.A.
24P.O.A.
28P.O.A.
32P.O.A.
36P.O.A.
40P.O.A.
44P.O.A.
48P.O.A.
52P.O.A.
56P.O.A.
60P.O.A.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Renesas Electronics

Maximum Continuous Collector Current

150 (Pulse) A

Maximum Collector Emitter Voltage

400 V

Maximum Gate Emitter Voltage

±6V

Maximum Power Dissipation

1.6 W

Package Type

TSOJ

Mounting Type

Surface Mount

Channel Type

N

Pin Count

8

Transistor Configuration

Single

Dimensions

3.1 x 2.5 x 1mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

5100pF

Maximum Operating Temperature

+150 °C

Detalji o proizvodu

IGBT Discretes, Renesas Electronics

IGBT Discretes & Modules

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više