N-Channel MOSFET, 12 A, 600 V, 3-Pin D2PAK STMicroelectronics STB18N60DM2

Name: N-Channel MOSFET, 12 A, 600 V, 3-Pin D2PAK STMicroelectronics STB18N60DM2
Brand: STMicroelectronics
SKU: 1116459
Availability: LimitedAvailability

RS kataloški broj:: 111-6459brend: STMicroelectronicsProizvođački broj:: STB18N60DM2

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Tehnička dokumentacija

Tehnički podaci

Brand

STMicroelectronics

Channel Type

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

600 V

Series

MDmesh DM2

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

Maximum Drain Source Resistance

290 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

Minimum Gate Threshold Voltage

Maximum Power Dissipation

90 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

Maximum Operating Temperature

+150 °C

Length

9.35mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Width

10.4mm

Transistor Material

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

Height

4.6mm

Detalji o proizvodu

N-Channel MDmesh DM2 Series, STMicroelectronics

The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.

MOSFET Transistors, STMicroelectronics

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Proverite ponovno kasnije.

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RSD 2.756

RSD 551,279 komadno (u pakovanju od 5) (bez PDV-a)

RSD 3.308

RSD 661,535 komadno (u pakovanju od 5) (s PDV-om)

N-Channel MOSFET, 12 A, 600 V, 3-Pin D2PAK STMicroelectronics STB18N60DM2

Odaberite vrstu pakovanja

Standard

RSD 2.756

RSD 551,279 komadno (u pakovanju od 5) (bez PDV-a)

RSD 3.308

RSD 661,535 komadno (u pakovanju od 5) (s PDV-om)

N-Channel MOSFET, 12 A, 600 V, 3-Pin D2PAK STMicroelectronics STB18N60DM2

Informacije o stanju skladišta trenutno nisu dostupne.

Odaberite vrstu pakovanja

Standard

Kupujte na veliko

količina	Jedinična cena	Po pakovanje
5 - 5	RSD 551,279	RSD 2.756
10 - 95	RSD 475,511	RSD 2.378
100 - 495	RSD 387,986	RSD 1.940
500+	RSD 340,957	RSD 1.705

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Tehnička dokumentacija

Tehnički podaci

Brand

STMicroelectronics

Channel Type

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

600 V

Series

MDmesh DM2

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

Maximum Drain Source Resistance

290 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

Minimum Gate Threshold Voltage

Maximum Power Dissipation

90 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

Maximum Operating Temperature

+150 °C

Length

9.35mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Width

10.4mm

Transistor Material

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

Height

4.6mm

Detalji o proizvodu

N-Channel MDmesh DM2 Series, STMicroelectronics

The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.