Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
500 V
Series
MDmesh
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
320 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Width
4.6mm
Maximum Operating Temperature
+150 °C
Length
10.4mm
Typical Gate Charge @ Vgs
27 nC @ 10 V
Transistor Material
Si
Height
16.4mm
Detalji o proizvodu
N-Channel MDmesh™, 500V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
KM 276,75
KM 5,535 Each (In a Tube of 50) (bez PDV-a)
KM 323,80
KM 6,476 Each (In a Tube of 50) (s PDV-om)
50
KM 276,75
KM 5,535 Each (In a Tube of 50) (bez PDV-a)
KM 323,80
KM 6,476 Each (In a Tube of 50) (s PDV-om)
50
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
količina | Jedinična cijena | Po cijev |
---|---|---|
50 - 50 | KM 5,535 | KM 276,75 |
100 - 200 | KM 4,557 | KM 227,85 |
250+ | KM 4,264 | KM 213,18 |
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
500 V
Series
MDmesh
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
320 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Width
4.6mm
Maximum Operating Temperature
+150 °C
Length
10.4mm
Typical Gate Charge @ Vgs
27 nC @ 10 V
Transistor Material
Si
Height
16.4mm
Detalji o proizvodu