STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 3.5 A, 1000 V, 3-Pin TO-220FP STF5NK100Z
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
1000 V
Package Type
TO-220FP
Series
MDmesh, SuperMESH
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.7 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
42 nC @ 10 V
Width
4.6mm
Height
9.3mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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€ 7,86
€ 3,93 Each (In a Pack of 2) (bez PDV-a)
€ 9,20
€ 4,598 Each (In a Pack of 2) (s PDV-om)
Standard
2
€ 7,86
€ 3,93 Each (In a Pack of 2) (bez PDV-a)
€ 9,20
€ 4,598 Each (In a Pack of 2) (s PDV-om)
Standard
2
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
| količina | Jedinična cijena | Po pakovanje |
|---|---|---|
| 2 - 8 | € 3,93 | € 7,86 |
| 10 - 98 | € 3,37 | € 6,74 |
| 100 - 498 | € 2,81 | € 5,62 |
| 500 - 998 | € 2,61 | € 5,22 |
| 1000+ | € 2,29 | € 4,58 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
1000 V
Package Type
TO-220FP
Series
MDmesh, SuperMESH
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.7 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
42 nC @ 10 V
Width
4.6mm
Height
9.3mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda