N-Channel MOSFET, 13 A, 650 V, 3-Pin TO-220FP STMicroelectronics STFH18N60M2

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Tehnička dokumentacija

Tehnički podaci

Channel Type

N

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220FP

Series

MDmesh M2

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

11.1mm

Typical Gate Charge @ Vgs

21.5 nC @ 10 V

Number of Elements per Chip

1

Width

4.8mm

Forward Diode Voltage

1.6V

Height

16.2mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics

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N-Channel MOSFET, 13 A, 650 V, 3-Pin TO-220FP STMicroelectronics STFH18N60M2

P.O.A.

N-Channel MOSFET, 13 A, 650 V, 3-Pin TO-220FP STMicroelectronics STFH18N60M2
Informacije o stanju skladišta trenutno nisu dostupne.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Channel Type

N

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220FP

Series

MDmesh M2

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

11.1mm

Typical Gate Charge @ Vgs

21.5 nC @ 10 V

Number of Elements per Chip

1

Width

4.8mm

Forward Diode Voltage

1.6V

Height

16.2mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više