STMicroelectronics STGB10NC60HDT4 IGBT, 10 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsMaximum Continuous Collector Current
10 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
65 W
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
10.4 x 9.35 x 4.6mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Detalji o proizvodu
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
RSD 1.757
RSD 351,408 komadno (u pakovanju od 5) (bez PDV-a)
RSD 2.108
RSD 421,69 komadno (u pakovanju od 5) (s PDV-om)
Standard
5
RSD 1.757
RSD 351,408 komadno (u pakovanju od 5) (bez PDV-a)
RSD 2.108
RSD 421,69 komadno (u pakovanju od 5) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
5
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | Jedinična cena | Po pakovanje |
|---|---|---|
| 5 - 20 | RSD 351,408 | RSD 1.757 |
| 25 - 45 | RSD 338,344 | RSD 1.692 |
| 50 - 120 | RSD 318,749 | RSD 1.594 |
| 125 - 245 | RSD 296,541 | RSD 1.483 |
| 250+ | RSD 293,929 | RSD 1.470 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsMaximum Continuous Collector Current
10 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
65 W
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
10.4 x 9.35 x 4.6mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Detalji o proizvodu
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda