Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
100 V
Series
DeepGate, STripFET
Package Type
H2PAK-2
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.4mm
Typical Gate Charge @ Vgs
117 nC @ 10 V
Width
10.57mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
4.8mm
Detalji o proizvodu
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
€ 5,15
komadno (isporučuje se u namotaju) (bez PDV-a)
€ 6,026
komadno (isporučuje se u namotaju) (s PDV-om)
Proizvodno pakovanje (kolut)
2
€ 5,15
komadno (isporučuje se u namotaju) (bez PDV-a)
€ 6,026
komadno (isporučuje se u namotaju) (s PDV-om)
Proizvodno pakovanje (kolut)
2
Kupujte na veliko
količina | Jedinična cijena | Po kolut |
---|---|---|
2 - 8 | € 5,15 | € 10,30 |
10 - 18 | € 4,95 | € 9,90 |
20 - 48 | € 4,65 | € 9,30 |
50 - 98 | € 4,35 | € 8,70 |
100+ | € 4,30 | € 8,60 |
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
100 V
Series
DeepGate, STripFET
Package Type
H2PAK-2
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.4mm
Typical Gate Charge @ Vgs
117 nC @ 10 V
Width
10.57mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
4.8mm
Detalji o proizvodu
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.