STMicroelectronics N-Channel MOSFET, 13 A, 600 V, 3-Pin TO-220FP STP13NK60ZFP
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
600 V
Series
MDmesh, SuperMESH
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
66 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Height
16.4mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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KM 32,37
KM 6,474 Each (In a Pack of 5) (bez PDV-a)
KM 37,87
KM 7,575 Each (In a Pack of 5) (s PDV-om)
Standard
5
KM 32,37
KM 6,474 Each (In a Pack of 5) (bez PDV-a)
KM 37,87
KM 7,575 Each (In a Pack of 5) (s PDV-om)
Standard
5
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
| količina | Jedinična cijena | Po pakovanje |
|---|---|---|
| 5 - 5 | KM 6,474 | KM 32,37 |
| 10 - 95 | KM 5,554 | KM 27,77 |
| 100 - 495 | KM 4,655 | KM 23,27 |
| 500 - 995 | KM 4,303 | KM 21,51 |
| 1000+ | KM 4,166 | KM 20,83 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
600 V
Series
MDmesh, SuperMESH
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
66 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Height
16.4mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda