Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
100 V
Series
STripFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
28 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
46.5 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
9.15mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
KM 158,42
KM 3,168 Each (In a Tube of 50) (bez PDV-a)
KM 185,35
KM 3,707 Each (In a Tube of 50) (s PDV-om)
50
KM 158,42
KM 3,168 Each (In a Tube of 50) (bez PDV-a)
KM 185,35
KM 3,707 Each (In a Tube of 50) (s PDV-om)
50
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
količina | Jedinična cijena | Po cijev |
---|---|---|
50 - 50 | KM 3,168 | KM 158,42 |
100 - 450 | KM 2,503 | KM 125,17 |
500 - 950 | KM 2,21 | KM 110,50 |
1000 - 4950 | KM 1,917 | KM 95,83 |
5000+ | KM 1,878 | KM 93,88 |
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
100 V
Series
STripFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
28 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
46.5 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
9.15mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu