N-Channel MOSFET, 3 A, 60 V, 3-Pin SOT-23 Taiwan Semi TSM2308CX RFG

Name: N-Channel MOSFET, 3 A, 60 V, 3-Pin SOT-23 Taiwan Semi TSM2308CX RFG
Brand: Taiwan Semiconductor
SKU: 1713697
Availability: LimitedAvailability

RS kataloški broj:: 171-3697robna marka: Taiwan SemiconductorProizvođački broj:: TSM2308CX RFG

Prikaži sve u MOSFETs

Tehnička dokumentacija

Tehnički podaci

Brand

Taiwan Semiconductor

Channel Type

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

Maximum Drain Source Resistance

192 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

3.99 nC @ 4.5 V

Width

1.4mm

Number of Elements per Chip

Forward Diode Voltage

1.2V

Height

1.05mm

Minimum Operating Temperature

-55 °C

Informacije o stanju skladišta trenutno nisu dostupne.

Provjerite ponovno kasnije.

Informacije o stanju skladišta trenutno nisu dostupne.

€ 0,43

Each (In a Pack of 50) (bez PDV-a)

€ 0,503

Each (In a Pack of 50) (s PDV-om)

N-Channel MOSFET, 3 A, 60 V, 3-Pin SOT-23 Taiwan Semi TSM2308CX RFG

Odaberite vrstu pakovanja

€ 0,43

Each (In a Pack of 50) (bez PDV-a)

€ 0,503

Each (In a Pack of 50) (s PDV-om)

N-Channel MOSFET, 3 A, 60 V, 3-Pin SOT-23 Taiwan Semi TSM2308CX RFG

Informacije o stanju skladišta trenutno nisu dostupne.

Odaberite vrstu pakovanja

Kupujte na veliko

količina	Jedinična cijena	Po pakovanje
50 - 200	€ 0,43	€ 21,50
250+	€ 0,42	€ 21,00

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Tehnička dokumentacija

Tehnički podaci

Brand

Taiwan Semiconductor

Channel Type

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

Maximum Drain Source Resistance

192 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

3.99 nC @ 4.5 V

Width

1.4mm

Number of Elements per Chip

Forward Diode Voltage

1.2V

Height

1.05mm

Minimum Operating Temperature

-55 °C