Tehnička dokumentacija
Tehnički podaci
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
15 A
Maximum Collector Emitter Voltage
230 V
Package Type
TO-3P
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
230 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
15.5 x 4.5 x 20mm
Maximum Operating Temperature
+150 °C
Zemlja podrijetla
China
Detalji o proizvodu
NPN Power Transistors, Toshiba
Bipolar Transistors, Toshiba
RSD 1.888
RSD 377,535 komadno (u pakovanju od 5) (bez PDV-a)
RSD 2.265
RSD 453,042 komadno (u pakovanju od 5) (s PDV-om)
5
RSD 1.888
RSD 377,535 komadno (u pakovanju od 5) (bez PDV-a)
RSD 2.265
RSD 453,042 komadno (u pakovanju od 5) (s PDV-om)
5
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
količina | Jedinična cena | Po pakovanje |
---|---|---|
5 - 20 | RSD 377,535 | RSD 1.888 |
25 - 45 | RSD 288,703 | RSD 1.444 |
50 - 120 | RSD 269,108 | RSD 1.346 |
125+ | RSD 258,657 | RSD 1.293 |
Tehnička dokumentacija
Tehnički podaci
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
15 A
Maximum Collector Emitter Voltage
230 V
Package Type
TO-3P
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
230 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
15.5 x 4.5 x 20mm
Maximum Operating Temperature
+150 °C
Zemlja podrijetla
China
Detalji o proizvodu