Tehnička dokumentacija
Tehnički podaci
Brand
ToshibaChannel Type
N
Idss Drain-Source Cut-off Current
1.2 to 3.0mA
Maximum Drain Source Voltage
10 V
Maximum Gate Source Voltage
-30 V
Maximum Drain Gate Voltage
-50V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-346 (SC-59)
Pin Count
3
Dimensions
2.9 x 1.5 x 1.1mm
Length
2.9mm
Maximum Operating Temperature
+125 °C
Width
1.5mm
Height
1.1mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-channel JFET, Toshiba
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
KM 8,02
KM 0,802 Each (In a Pack of 10) (bez PDV-a)
KM 9,38
KM 0,938 Each (In a Pack of 10) (s PDV-om)
Standard
10
KM 8,02
KM 0,802 Each (In a Pack of 10) (bez PDV-a)
KM 9,38
KM 0,938 Each (In a Pack of 10) (s PDV-om)
Standard
10
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Tehnička dokumentacija
Tehnički podaci
Brand
ToshibaChannel Type
N
Idss Drain-Source Cut-off Current
1.2 to 3.0mA
Maximum Drain Source Voltage
10 V
Maximum Gate Source Voltage
-30 V
Maximum Drain Gate Voltage
-50V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-346 (SC-59)
Pin Count
3
Dimensions
2.9 x 1.5 x 1.1mm
Length
2.9mm
Maximum Operating Temperature
+125 °C
Width
1.5mm
Height
1.1mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-channel JFET, Toshiba
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.