Tehnička dokumentacija
Tehnički podaci
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
42 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
1.8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
3.4 nC @ 4.5 V
Height
0.8mm
Zemlja podrijetla
Thailand
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
€ 0,16
komadno (u namotaju od 3000) (bez PDV-a)
€ 0,187
komadno (u namotaju od 3000) (s PDV-om)
3000
€ 0,16
komadno (u namotaju od 3000) (bez PDV-a)
€ 0,187
komadno (u namotaju od 3000) (s PDV-om)
3000
Kupujte na veliko
količina | Jedinična cijena | Po kolut |
---|---|---|
3000 - 3000 | € 0,16 | € 480,00 |
6000+ | € 0,15 | € 450,00 |
Tehnička dokumentacija
Tehnički podaci
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
42 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
1.8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
3.4 nC @ 4.5 V
Height
0.8mm
Zemlja podrijetla
Thailand