Tehnička dokumentacija
Tehnički podaci
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
80 V
Package Type
TO-220SIS
Mounting Type
Through Hole
Maximum Power Dissipation
30 W
Minimum DC Current Gain
120
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
80 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
10 x 4.5 x 15mm
Maximum Operating Temperature
+150 °C
Zemlja podrijetla
Japan
Detalji o proizvodu
NPN Power Transistors, Toshiba
Bipolar Transistors, Toshiba
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
€ 1,88
Each (In a Pack of 5) (bez PDV-a)
€ 2,20
Each (In a Pack of 5) (s PDV-om)
5
€ 1,88
Each (In a Pack of 5) (bez PDV-a)
€ 2,20
Each (In a Pack of 5) (s PDV-om)
5
Kupujte na veliko
količina | Jedinična cijena | Po pakovanje |
---|---|---|
5 - 20 | € 1,88 | € 9,40 |
25+ | € 1,62 | € 8,10 |
Tehnička dokumentacija
Tehnički podaci
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
80 V
Package Type
TO-220SIS
Mounting Type
Through Hole
Maximum Power Dissipation
30 W
Minimum DC Current Gain
120
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
80 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
10 x 4.5 x 15mm
Maximum Operating Temperature
+150 °C
Zemlja podrijetla
Japan
Detalji o proizvodu