Tehnička dokumentacija
Tehnički podaci
Brand
VishaySpectrums Detected
Infrared, Visible Light
Typical Fall Time
2.3µs
Typical Rise Time
2µs
Number of Channels
1
Maximum Light Current
15000µA
Maximum Dark Current
200nA
Angle of Half Sensitivity
40 °
Polarity
NPN
Number of Pins
2
Mounting Type
Through Hole
Package Type
5mm (T-1 3/4)
Dimensions
5.75 x 5.75 x 8.6mm
Collector Current
50mA
Maximum Wavelength Detected
1080nm
Spectral Range of Sensitivity
450 → 1080 nm
Minimum Wavelength Detected
450nm
Length
5.75mm
Width
5.75mm
Height
8.6mm
Detalji o proizvodu
BPW96B and BPW96C Series Phototransistors
Vishay Semiconductor's BPW96B and BPW96C series are a family of silicon NPN phototransistors. They are in 5mm (T-1 3/4) through-hole packages with a clear plastic lens. This enables the BPW96B and BPW96C phototransistors to be sensitive to visible and near IR radiation. Suitable applications for these transistors include detectors in electronic control and drive circuits.
IR Phototransistors, Vishay Semiconductor
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Provjerite ponovno kasnije.
€ 0,60
Each (In a Bag of 1000) (bez PDV-a)
€ 0,702
Each (In a Bag of 1000) (s PDV-om)
1000
€ 0,60
Each (In a Bag of 1000) (bez PDV-a)
€ 0,702
Each (In a Bag of 1000) (s PDV-om)
1000
Tehnička dokumentacija
Tehnički podaci
Brand
VishaySpectrums Detected
Infrared, Visible Light
Typical Fall Time
2.3µs
Typical Rise Time
2µs
Number of Channels
1
Maximum Light Current
15000µA
Maximum Dark Current
200nA
Angle of Half Sensitivity
40 °
Polarity
NPN
Number of Pins
2
Mounting Type
Through Hole
Package Type
5mm (T-1 3/4)
Dimensions
5.75 x 5.75 x 8.6mm
Collector Current
50mA
Maximum Wavelength Detected
1080nm
Spectral Range of Sensitivity
450 → 1080 nm
Minimum Wavelength Detected
450nm
Length
5.75mm
Width
5.75mm
Height
8.6mm
Detalji o proizvodu
BPW96B and BPW96C Series Phototransistors
Vishay Semiconductor's BPW96B and BPW96C series are a family of silicon NPN phototransistors. They are in 5mm (T-1 3/4) through-hole packages with a clear plastic lens. This enables the BPW96B and BPW96C phototransistors to be sensitive to visible and near IR radiation. Suitable applications for these transistors include detectors in electronic control and drive circuits.