Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
190 mA, 300 mA
Maximum Drain Source Voltage
60 V
Package Type
SC-89-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
3 Ω, 8 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
250 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
1.7mm
Typical Gate Charge @ Vgs
1700 nC @ 15 V, 750 nC @ 4.5 V
Width
1.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.6mm
Detalji o proizvodu
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Provjerite ponovno kasnije.
€ 0,65
Each (In a Pack of 20) (bez PDV-a)
€ 0,76
Each (In a Pack of 20) (s PDV-om)
20
€ 0,65
Each (In a Pack of 20) (bez PDV-a)
€ 0,76
Each (In a Pack of 20) (s PDV-om)
20
Kupujte na veliko
količina | Jedinična cijena | Po pakovanje |
---|---|---|
20 - 180 | € 0,65 | € 13,00 |
200 - 480 | € 0,62 | € 12,40 |
500 - 980 | € 0,59 | € 11,80 |
1000 - 1980 | € 0,57 | € 11,40 |
2000+ | € 0,56 | € 11,20 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
190 mA, 300 mA
Maximum Drain Source Voltage
60 V
Package Type
SC-89-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
3 Ω, 8 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
250 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
1.7mm
Typical Gate Charge @ Vgs
1700 nC @ 15 V, 750 nC @ 4.5 V
Width
1.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.6mm
Detalji o proizvodu