Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
4.7 A, 6.8 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
42.5 mΩ, 62 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
3 W, 3.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
11.7 nC @ 10 V, 25 nC @ 10 V
Width
4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.55mm
Zemlja podrijetla
China
Detalji o proizvodu
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Provjerite ponovno kasnije.
€ 1,17
Each (In a Pack of 20) (bez PDV-a)
€ 1,369
Each (In a Pack of 20) (s PDV-om)
20
€ 1,17
Each (In a Pack of 20) (bez PDV-a)
€ 1,369
Each (In a Pack of 20) (s PDV-om)
20
Kupujte na veliko
količina | Jedinična cijena | Po pakovanje |
---|---|---|
20 - 180 | € 1,17 | € 23,40 |
200 - 480 | € 0,91 | € 18,20 |
500 - 980 | € 0,80 | € 16,00 |
1000 - 1980 | € 0,77 | € 15,40 |
2000+ | € 0,67 | € 13,40 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
4.7 A, 6.8 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
42.5 mΩ, 62 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
3 W, 3.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
11.7 nC @ 10 V, 25 nC @ 10 V
Width
4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.55mm
Zemlja podrijetla
China
Detalji o proizvodu