Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
24.2 A
Maximum Drain Source Voltage
250 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
67 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.26mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
25.3 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
6.25mm
Height
1.12mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Detalji o proizvodu
N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
€ 1,55
komadno (u namotaju od 3000) (bez PDV-a)
€ 1,814
komadno (u namotaju od 3000) (s PDV-om)
3000
€ 1,55
komadno (u namotaju od 3000) (bez PDV-a)
€ 1,814
komadno (u namotaju od 3000) (s PDV-om)
3000
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
24.2 A
Maximum Drain Source Voltage
250 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
67 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.26mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
25.3 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
6.25mm
Height
1.12mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Detalji o proizvodu