Tehnička dokumentacija
Tehnički podaci
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
1000 V
Series
C3M
Package Type
TO-247-4
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
113.5 W
Maximum Gate Source Voltage
-8 V, +19 V
Transistor Material
SiC
Length
16.13mm
Typical Gate Charge @ Vgs
35 nC @ 15 V, 35 nC @ 4 V
Maximum Operating Temperature
+150 °C
Width
5.21mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
4.8V
Height
23.6mm
Detalji o proizvodu
Silicon Carbide Power MOSFET, C3M Series, Cree Inc.
MOSFET Transistors, Cree Inc.
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
€ 30,50
Each (bez PDV-a)
€ 35,68
Each (s PDV-om)
1
€ 30,50
Each (bez PDV-a)
€ 35,68
Each (s PDV-om)
1
Kupujte na veliko
količina | Jedinična cijena |
---|---|
1 - 24 | € 30,50 |
25+ | € 28,50 |
Tehnička dokumentacija
Tehnički podaci
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
1000 V
Series
C3M
Package Type
TO-247-4
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
113.5 W
Maximum Gate Source Voltage
-8 V, +19 V
Transistor Material
SiC
Length
16.13mm
Typical Gate Charge @ Vgs
35 nC @ 15 V, 35 nC @ 4 V
Maximum Operating Temperature
+150 °C
Width
5.21mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
4.8V
Height
23.6mm
Detalji o proizvodu