Hex SiC N-Channel MOSFET, 29 A, 1200 V, 28-Pin Module Wolfspeed CCS020M12CM2
Tehnička dokumentacija
Tehnički podaci
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
29 A
Maximum Drain Source Voltage
1200 V
Package Type
Module
Mounting Type
Screw Mount
Pin Count
28
Maximum Drain Source Resistance
208 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.7V
Maximum Power Dissipation
167 W
Transistor Configuration
3 Phase
Maximum Gate Source Voltage
-10 V, +25 V
Width
47mm
Number of Elements per Chip
6
Maximum Operating Temperature
+150 °C
Transistor Material
SiC
Length
108mm
Typical Gate Charge @ Vgs
61.5 nC @ 20 V, 61.5 nC @ 5 V
Height
17mm
Forward Diode Voltage
2.3V
Minimum Operating Temperature
-40 °C
Zemlja podrijetla
China
Detalji o proizvodu
Wolfspeed Silicon Carbide Power MOSFET Modules
Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.
MOSFET Transistors, Wolfspeed
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PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
29 A
Maximum Drain Source Voltage
1200 V
Package Type
Module
Mounting Type
Screw Mount
Pin Count
28
Maximum Drain Source Resistance
208 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.7V
Maximum Power Dissipation
167 W
Transistor Configuration
3 Phase
Maximum Gate Source Voltage
-10 V, +25 V
Width
47mm
Number of Elements per Chip
6
Maximum Operating Temperature
+150 °C
Transistor Material
SiC
Length
108mm
Typical Gate Charge @ Vgs
61.5 nC @ 20 V, 61.5 nC @ 5 V
Height
17mm
Forward Diode Voltage
2.3V
Minimum Operating Temperature
-40 °C
Zemlja podrijetla
China
Detalji o proizvodu
Wolfspeed Silicon Carbide Power MOSFET Modules
Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.
MOSFET Transistors, Wolfspeed
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda