Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
30 V
Package Type
V-DFN3333
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Width
3.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.35mm
Typical Gate Charge @ Vgs
64.2 nC @ 10 V
Height
0.78mm
Series
DMP
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Detalji o proizvodu
P-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
€ 0,57
Each (In a Pack of 10) (bez PDV-a)
€ 0,667
Each (In a Pack of 10) (s PDV-om)
10
€ 0,57
Each (In a Pack of 10) (bez PDV-a)
€ 0,667
Each (In a Pack of 10) (s PDV-om)
10
Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
30 V
Package Type
V-DFN3333
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Width
3.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.35mm
Typical Gate Charge @ Vgs
64.2 nC @ 10 V
Height
0.78mm
Series
DMP
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Detalji o proizvodu