Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
30 V
Series
OptiMOS P
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
137 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +5 V
Width
4.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10mm
Typical Gate Charge @ Vgs
125 nC @ 10 V
Height
15.65mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
Malaysia
Detalji o proizvodu
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Provjerite ponovno kasnije.
€ 2,30
Each (In a Tube of 50) (bez PDV-a)
€ 2,691
Each (In a Tube of 50) (s PDV-om)
50
€ 2,30
Each (In a Tube of 50) (bez PDV-a)
€ 2,691
Each (In a Tube of 50) (s PDV-om)
50
Kupujte na veliko
količina | Jedinična cijena | Po cijev |
---|---|---|
50 - 50 | € 2,30 | € 115,00 |
100 - 200 | € 2,10 | € 105,00 |
250+ | € 2,05 | € 102,50 |
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
30 V
Series
OptiMOS P
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
137 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +5 V
Width
4.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10mm
Typical Gate Charge @ Vgs
125 nC @ 10 V
Height
15.65mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
Malaysia
Detalji o proizvodu
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.