Infineon HEXFET N-Channel MOSFET, 33 A, 100 V, 3-Pin I2PAK IRF540NLPBF

RS kataloški broj:: 907-5028brend: InfineonProizvođački broj:: IRF540NLPBF
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Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

33 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

I2PAK (TO-262)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

44 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

130 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.83mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.67mm

Typical Gate Charge @ Vgs

71 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

9.65mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Detalji o proizvodu

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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RSD 2.600

RSD 259,963 komadno (u pakovanju od 10) (bez PDV-a)

RSD 3.120

RSD 311,956 komadno (u pakovanju od 10) (s PDV-om)

Infineon HEXFET N-Channel MOSFET, 33 A, 100 V, 3-Pin I2PAK IRF540NLPBF
Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 10.

Proizvodnja -

Dostupno u više komada 10.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

10

Dostupno u više komada 10
10RSD 2.600
20RSD 5.199
30RSD 7.799
40RSD 10.399
50RSD 12.998
60RSD 15.598
70RSD 18.197
80RSD 20.797
90RSD 23.397
100RSD 24.951
110RSD 27.446
120RSD 29.942
130RSD 32.437
140RSD 34.932
150RSD 37.427

RSD 2.600

RSD 259,963 komadno (u pakovanju od 10) (bez PDV-a)

RSD 3.120

RSD 311,956 komadno (u pakovanju od 10) (s PDV-om)

Infineon HEXFET N-Channel MOSFET, 33 A, 100 V, 3-Pin I2PAK IRF540NLPBF

Informacije o stanju skladišta trenutno nisu dostupne.

Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 10.

Proizvodnja -

Dostupno u više komada 10.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

10

Dostupno u više komada 10
10RSD 2.600
20RSD 5.199
30RSD 7.799
40RSD 10.399
50RSD 12.998
60RSD 15.598
70RSD 18.197
80RSD 20.797
90RSD 23.397
100RSD 24.951
110RSD 27.446
120RSD 29.942
130RSD 32.437
140RSD 34.932
150RSD 37.427

Informacije o stanju skladišta trenutno nisu dostupne.

količinaJedinična cenaPo pakovanje
10 - 90RSD 259,963RSD 2.600
100 - 490RSD 249,513RSD 2.495
500 - 990RSD 248,206RSD 2.482
1000+RSD 240,368RSD 2.404

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

33 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

I2PAK (TO-262)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

44 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

130 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.83mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.67mm

Typical Gate Charge @ Vgs

71 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

9.65mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Detalji o proizvodu

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više