P-Channel MOSFET, 11 A, 20 V, 8-Pin SOIC onsemi FDS6576

RS kataloški broj:: 917-5487Probna marka: onsemiProizvođački broj:: FDS6576
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Tehnička dokumentacija

Tehnički podaci

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

20 V

Series

PowerTrench

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

43 nC @ 4.5 V

Width

4mm

Transistor Material

Si

Height

1.5mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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€ 0,75

komadno (isporučuje se u namotaju) (bez PDV-a)

€ 0,878

komadno (isporučuje se u namotaju) (s PDV-om)

P-Channel MOSFET, 11 A, 20 V, 8-Pin SOIC onsemi FDS6576
Odaberite vrstu pakovanja

€ 0,75

komadno (isporučuje se u namotaju) (bez PDV-a)

€ 0,878

komadno (isporučuje se u namotaju) (s PDV-om)

P-Channel MOSFET, 11 A, 20 V, 8-Pin SOIC onsemi FDS6576
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

20 V

Series

PowerTrench

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

43 nC @ 4.5 V

Width

4mm

Transistor Material

Si

Height

1.5mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više