onsemi NGTB50N60FWG IGBT, 100 A 600 V, 3-Pin TO-247, Through Hole

RS kataloški broj:: 145-5149robna marka: onsemiProizvođački broj:: NGTB50N60FWG
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Tehnička dokumentacija

Tehnički podaci

Brand

onsemi

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

223 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

16.25 x 5.3 x 21.4mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Zemlja podrijetla

China

Detalji o proizvodu

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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onsemi NGTB50N60FWG IGBT, 100 A 600 V, 3-Pin TO-247, Through Hole

P.O.A.

onsemi NGTB50N60FWG IGBT, 100 A 600 V, 3-Pin TO-247, Through Hole
Informacije o stanju skladišta trenutno nisu dostupne.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

onsemi

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

223 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

16.25 x 5.3 x 21.4mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Zemlja podrijetla

China

Detalji o proizvodu

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više