Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
400 mA
Maximum Drain Source Voltage
600 V
Package Type
SOT-223
Series
MDmesh, SuperMESH
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
8.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.25V
Maximum Power Dissipation
3.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
6.5mm
Maximum Operating Temperature
+150 °C
Width
3.5mm
Transistor Material
Si
Typical Gate Charge @ Vgs
7 nC @ 10 V
Height
1.8mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 12,80
€ 1,28 Each (In a Pack of 10) (bez PDV-a)
€ 14,98
€ 1,498 Each (In a Pack of 10) (s PDV-om)
Standard
10
€ 12,80
€ 1,28 Each (In a Pack of 10) (bez PDV-a)
€ 14,98
€ 1,498 Each (In a Pack of 10) (s PDV-om)
Standard
10
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
količina | Jedinična cijena | Po pakovanje |
---|---|---|
10 - 20 | € 1,28 | € 12,80 |
30 - 90 | € 1,23 | € 12,30 |
100 - 490 | € 0,97 | € 9,70 |
500 - 990 | € 0,85 | € 8,50 |
1000+ | € 0,71 | € 7,10 |
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
400 mA
Maximum Drain Source Voltage
600 V
Package Type
SOT-223
Series
MDmesh, SuperMESH
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
8.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.25V
Maximum Power Dissipation
3.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
6.5mm
Maximum Operating Temperature
+150 °C
Width
3.5mm
Transistor Material
Si
Typical Gate Charge @ Vgs
7 nC @ 10 V
Height
1.8mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu