N-Channel MOSFET, 22 A, 650 V, 3-Pin TO-247 STMicroelectronics STW28N60DM2
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
650 V
Series
MDmesh DM2
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
5.15mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
15.75mm
Typical Gate Charge @ Vgs
39 nC @ 10 V
Height
20.15mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
MOSFET Transistors, STMicroelectronics
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Provjerite ponovno kasnije.
€ 120,00
€ 4,00 Each (In a Tube of 30) (bez PDV-a)
€ 140,40
€ 4,68 Each (In a Tube of 30) (s PDV-om)
30
€ 120,00
€ 4,00 Each (In a Tube of 30) (bez PDV-a)
€ 140,40
€ 4,68 Each (In a Tube of 30) (s PDV-om)
30
Kupujte na veliko
| količina | Jedinična cijena | Po cijev |
|---|---|---|
| 30 - 30 | € 4,00 | € 120,00 |
| 60 - 120 | € 3,25 | € 97,50 |
| 150+ | € 3,05 | € 91,50 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
650 V
Series
MDmesh DM2
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
5.15mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
15.75mm
Typical Gate Charge @ Vgs
39 nC @ 10 V
Height
20.15mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
MOSFET Transistors, STMicroelectronics
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda