Tehnička dokumentacija
Tehnički podaci
Brand
ToshibaChannel Type
N
Idss Drain-Source Cut-off Current
1.2 to 3.0mA
Maximum Drain Source Voltage
10 V
Maximum Gate Source Voltage
-30 V
Maximum Drain Gate Voltage
-50V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-346 (SC-59)
Pin Count
3
Dimensions
2.9 x 1.5 x 1.1mm
Height
1.1mm
Width
1.5mm
Maximum Operating Temperature
+125 °C
Length
2.9mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-channel JFET, Toshiba
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
€ 0,33
komadno (isporučuje se u namotaju) (bez PDV-a)
€ 0,386
komadno (isporučuje se u namotaju) (s PDV-om)
Proizvodno pakovanje (kolut)
100
€ 0,33
komadno (isporučuje se u namotaju) (bez PDV-a)
€ 0,386
komadno (isporučuje se u namotaju) (s PDV-om)
Proizvodno pakovanje (kolut)
100
Tehnička dokumentacija
Tehnički podaci
Brand
ToshibaChannel Type
N
Idss Drain-Source Cut-off Current
1.2 to 3.0mA
Maximum Drain Source Voltage
10 V
Maximum Gate Source Voltage
-30 V
Maximum Drain Gate Voltage
-50V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-346 (SC-59)
Pin Count
3
Dimensions
2.9 x 1.5 x 1.1mm
Height
1.1mm
Width
1.5mm
Maximum Operating Temperature
+125 °C
Length
2.9mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-channel JFET, Toshiba
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.