Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
4.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
20 nC @ 10 V, 8.8 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
4.9mm
Width
5.89mm
Minimum Operating Temperature
-55 °C
Height
1.04mm
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
€ 1,31
komadno (isporučuje se u namotaju) (bez PDV-a)
€ 1,533
komadno (isporučuje se u namotaju) (s PDV-om)
Proizvodno pakovanje (kolut)
5
€ 1,31
komadno (isporučuje se u namotaju) (bez PDV-a)
€ 1,533
komadno (isporučuje se u namotaju) (s PDV-om)
Proizvodno pakovanje (kolut)
5
Kupujte na veliko
količina | Jedinična cijena | Po kolut |
---|---|---|
5 - 45 | € 1,31 | € 6,55 |
50 - 245 | € 1,27 | € 6,35 |
250 - 495 | € 0,97 | € 4,85 |
500 - 1245 | € 0,94 | € 4,70 |
1250+ | € 0,87 | € 4,35 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
4.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
20 nC @ 10 V, 8.8 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
4.9mm
Width
5.89mm
Minimum Operating Temperature
-55 °C
Height
1.04mm
Zemlja podrijetla
China
Detalji o proizvodu