Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexMounting Type
Surface Mount
Package Type
SOD-123
Maximum Continuous Forward Current
500mA
Peak Reverse Repetitive Voltage
30V
Diode Configuration
Single
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Pin Count
2
Maximum Forward Voltage Drop
430mV
Number of Elements per Chip
1
Diode Technology
Schottky Barrier
Peak Non-Repetitive Forward Surge Current
5.5A
Zemlja podrijetla
China
Detalji o proizvodu
Schottky Barrier Diodes, 300mA to 1A, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes. While possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.
Diodes and Rectifiers, Diodes Inc
KM 19,56
KM 0,196 Each (Supplied as a Tape) (bez PDV-a)
KM 22,88
KM 0,229 Each (Supplied as a Tape) (s PDV-om)
Standard
100
KM 19,56
KM 0,196 Each (Supplied as a Tape) (bez PDV-a)
KM 22,88
KM 0,229 Each (Supplied as a Tape) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
100
Informacije o stanju skladišta trenutno nisu dostupne.
količina | Jedinična cijena | Po traka |
---|---|---|
100 - 500 | KM 0,196 | KM 19,56 |
600 - 1400 | KM 0,176 | KM 17,60 |
1500+ | KM 0,156 | KM 15,65 |
Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexMounting Type
Surface Mount
Package Type
SOD-123
Maximum Continuous Forward Current
500mA
Peak Reverse Repetitive Voltage
30V
Diode Configuration
Single
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Pin Count
2
Maximum Forward Voltage Drop
430mV
Number of Elements per Chip
1
Diode Technology
Schottky Barrier
Peak Non-Repetitive Forward Surge Current
5.5A
Zemlja podrijetla
China
Detalji o proizvodu
Schottky Barrier Diodes, 300mA to 1A, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes. While possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.