Infineon HEXFET N-Channel MOSFET, 36 A, 100 V, 3-Pin TO-220AB IRF540ZPBF

RS kataloški broj:: 688-6872brend: InfineonProizvođački broj:: IRF540ZPBF
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Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

36 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220AB

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

27 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

92 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.54mm

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

42 nC @ 10 V

Width

4.69mm

Transistor Material

Si

Height

8.77mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Zemlja podrijetla

China

Detalji o proizvodu

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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RSD 395

RSD 197,259 komadno (u pakovanju od 2) (bez PDV-a)

RSD 473

RSD 236,711 komadno (u pakovanju od 2) (s PDV-om)

Infineon HEXFET N-Channel MOSFET, 36 A, 100 V, 3-Pin TO-220AB IRF540ZPBF
Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 2.

Proizvodnja -

Dostupno u više komada 2.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

2

Dostupno u više komada 2
2RSD 395
4RSD 789
6RSD 1.184
8RSD 1.578
10RSD 1.973
12RSD 2.367
14RSD 2.762
16RSD 3.156
18RSD 3.551
20RSD 3.658
22RSD 4.024
24RSD 4.389
26RSD 4.755
28RSD 5.121
30RSD 5.487

RSD 395

RSD 197,259 komadno (u pakovanju od 2) (bez PDV-a)

RSD 473

RSD 236,711 komadno (u pakovanju od 2) (s PDV-om)

Infineon HEXFET N-Channel MOSFET, 36 A, 100 V, 3-Pin TO-220AB IRF540ZPBF

Informacije o stanju skladišta trenutno nisu dostupne.

Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 2.

Proizvodnja -

Dostupno u više komada 2.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

2

Dostupno u više komada 2
2RSD 395
4RSD 789
6RSD 1.184
8RSD 1.578
10RSD 1.973
12RSD 2.367
14RSD 2.762
16RSD 3.156
18RSD 3.551
20RSD 3.658
22RSD 4.024
24RSD 4.389
26RSD 4.755
28RSD 5.121
30RSD 5.487

Informacije o stanju skladišta trenutno nisu dostupne.

količinaJedinična cenaPo pakovanje
2 - 18RSD 197,259RSD 395
20 - 98RSD 182,889RSD 366
100 - 198RSD 175,051RSD 350
200 - 498RSD 169,825RSD 340
500+RSD 164,60RSD 329

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

36 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220AB

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

27 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

92 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.54mm

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

42 nC @ 10 V

Width

4.69mm

Transistor Material

Si

Height

8.77mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Zemlja podrijetla

China

Detalji o proizvodu

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više