Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
600 V
Series
MDmesh
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
285 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Typical Gate Charge @ Vgs
35 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Height
15.75mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
RSD 4.050
RSD 405 komad (isporucivo u Tubi) (bez PDV-a)
RSD 4.860
RSD 486 komad (isporucivo u Tubi) (s PDV-om)
Proizvodno pakovanje (cev)
10
RSD 4.050
RSD 405 komad (isporucivo u Tubi) (bez PDV-a)
RSD 4.860
RSD 486 komad (isporucivo u Tubi) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakovanje (cev)
10
Informacije o stanju skladišta trenutno nisu dostupne.
količina | Jedinična cena |
---|---|
10 - 99 | RSD 405 |
100 - 499 | RSD 327 |
500 - 999 | RSD 287 |
1000+ | RSD 250 |
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
600 V
Series
MDmesh
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
285 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Typical Gate Charge @ Vgs
35 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Height
15.75mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu