Infineon SRAM, CY62136EV30LL-45ZSXI- 2Mbit

Tehnička dokumentacija
Tehnički podaci
Proizvođač
Cypress SemiconductorMemory Size
2Mbit
Organisation
128K x 16 bit
Number of Words
128K
Number of Bits per Word
16bit
Maximum Random Access Time
45ns
Address Bus Width
16bit
Clock Frequency
1MHz
Low Power
Yes
Mounting Type
Surface Mount
Package Type
TSOP
Pin Count
44
Dimensions
18.51 x 10.26 x 1.04mm
Maximum Operating Supply Voltage
3.6 V
Height
1.04mm
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2.2 V
Maximum Operating Temperature
+85 °C
Length
18.51mm
Width
10.26mm
Zemlja podrijetla
United States
Detalji o proizvodu
Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor
The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.
SRAM (Static Random Access Memory)
Cijena na upit
Each (Supplied in a Tray) (bez PDV-a)
Proizvodno pakiranje (pakiranje)
2
Cijena na upit
Each (Supplied in a Tray) (bez PDV-a)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakiranje (pakiranje)
2
Informacije o stanju skladišta trenutno nisu dostupne.
Tehnička dokumentacija
Tehnički podaci
Proizvođač
Cypress SemiconductorMemory Size
2Mbit
Organisation
128K x 16 bit
Number of Words
128K
Number of Bits per Word
16bit
Maximum Random Access Time
45ns
Address Bus Width
16bit
Clock Frequency
1MHz
Low Power
Yes
Mounting Type
Surface Mount
Package Type
TSOP
Pin Count
44
Dimensions
18.51 x 10.26 x 1.04mm
Maximum Operating Supply Voltage
3.6 V
Height
1.04mm
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2.2 V
Maximum Operating Temperature
+85 °C
Length
18.51mm
Width
10.26mm
Zemlja podrijetla
United States
Detalji o proizvodu
Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor
The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.

