Tehnička dokumentacija
Tehnički podaci
Proizvođač
DiodesZetexMounting Type
Surface Mount
Package Type
DO-214AA (SMB)
Maximum Continuous Forward Current
3A
Peak Reverse Repetitive Voltage
40V
Diode Configuration
Single
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Pin Count
2
Maximum Forward Voltage Drop
500mV
Number of Elements per Chip
1
Diode Technology
Schottky Barrier
Peak Non-Repetitive Forward Surge Current
100A
Detalji o proizvodu
Schottky Barrier Diodes, 2A to 9A, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.
Diodes and Rectifiers, Diodes Inc
€ 34,50
€ 0,23 Each (Supplied on a Reel) (bez PDV-a)
€ 43,12
€ 0,288 Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakiranje (kolut)
150
€ 34,50
€ 0,23 Each (Supplied on a Reel) (bez PDV-a)
€ 43,12
€ 0,288 Each (Supplied on a Reel) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakiranje (kolut)
150
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena | Po kolut |
|---|---|---|
| 150 - 725 | € 0,23 | € 5,75 |
| 750 - 1475 | € 0,22 | € 5,50 |
| 1500+ | € 0,20 | € 5,00 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
DiodesZetexMounting Type
Surface Mount
Package Type
DO-214AA (SMB)
Maximum Continuous Forward Current
3A
Peak Reverse Repetitive Voltage
40V
Diode Configuration
Single
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Pin Count
2
Maximum Forward Voltage Drop
500mV
Number of Elements per Chip
1
Diode Technology
Schottky Barrier
Peak Non-Repetitive Forward Surge Current
100A
Detalji o proizvodu
Schottky Barrier Diodes, 2A to 9A, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.


