Tehnička dokumentacija
Tehnički podaci
Proizvođač
DiodesZetexMounting Type
Surface Mount
Package Type
DO-214AB (SMC)
Maximum Continuous Forward Current
5A
Peak Reverse Repetitive Voltage
40V
Diode Configuration
Single
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Pin Count
2
Maximum Forward Voltage Drop
550mV
Number of Elements per Chip
1
Diode Technology
Schottky Barrier
Peak Non-Repetitive Forward Surge Current
100A
Zemlja podrijetla
Taiwan, Province Of China
Detalji o proizvodu
Schottky Barrier Diodes, 2A to 9A, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.
Diodes and Rectifiers, Diodes Inc
€ 9,50
€ 0,38 komadno (u pakiranju od 25) (bez PDV-a)
€ 11,88
€ 0,475 komadno (u pakiranju od 25) (s PDV-om)
Standard
25
€ 9,50
€ 0,38 komadno (u pakiranju od 25) (bez PDV-a)
€ 11,88
€ 0,475 komadno (u pakiranju od 25) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
25
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena | Po pakiranje |
|---|---|---|
| 25 - 125 | € 0,38 | € 9,50 |
| 150 - 725 | € 0,24 | € 6,00 |
| 750 - 1475 | € 0,23 | € 5,75 |
| 1500+ | € 0,19 | € 4,75 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
DiodesZetexMounting Type
Surface Mount
Package Type
DO-214AB (SMC)
Maximum Continuous Forward Current
5A
Peak Reverse Repetitive Voltage
40V
Diode Configuration
Single
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Pin Count
2
Maximum Forward Voltage Drop
550mV
Number of Elements per Chip
1
Diode Technology
Schottky Barrier
Peak Non-Repetitive Forward Surge Current
100A
Zemlja podrijetla
Taiwan, Province Of China
Detalji o proizvodu
Schottky Barrier Diodes, 2A to 9A, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.


